| PART |
Description |
Maker |
| DTC114YE DTC114YE_D ON0281 |
CASE 463-01/ STYLE 1 SOT-416/SC-90
CASE 463-01, STYLE 1 SOT-416/SC-90
CASE 463-1, STYLE 1 SOT-16/SC-0
From old datasheet system
|
Motorola Inc
ON Semi
MOTOROLA[Motorola, Inc]
|
| DTA143EE DTA143EE_D ON0279 |
Bias Resistor Transistor
CASE 463-01, STYLE 1 SOT-416/SC-90
CASE 463-1, STYLE 1 SOT-16/SC-0
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| BAS4006LT1 |
CASE 318-08/ STYLE 11 SOT-23 (TO-236AB)
CASE 318-08, STYLE 11 SOT-23 (TO-236AB)
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| MBD110DWT1_D ON0400 |
CASE 419B-1, STYLE 6 SOT-363
From old datasheet system
|
ON Semi
|
| BAT54WT1 ON0130 |
30 VOLTS SCHOTTKY BARRIER DETECTOR AND SWITCHING DIODE
From old datasheet system
CASE 419?2, STYLE 2 SOT-23 (SC-0)
|
Motorola Inc
ONSEMI[ON Semiconductor]
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| UNR9216 UNR9213 UNR9215 UNR9214 UNR9210 UNR9211 UN |
Transistors with built-in Resistor
ST72321 - 8-BIT MCU WITH NESTED INTERRUPTS, FLASH,10-BIT ADC, FIVE TIMERS, SPI, SCI, I2C INTERFACE
TRANSISTOR | 50V V(BR)CEO | 100MA I(C) | SOT-416
UNR921X Series (UN921X Series) - NPN Transistor with built-in Resistor
DC-DC converter from 5 V to 12 V, 0.03 A for Flash memory programming supply 晶体管| 50V五（巴西）总裁| 100mA的一（c）|的SOT - 416
|
Matsshita / Panasonic
Panasonic, Corp.
|
| 2SC5662T2LP 2SC3838KT146P 2SC4043STPP 2SC4726TLN 2 |
Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 50MA I(C) | SOT-346
TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 50MA I(C) | SC-72
TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 50MA I(C) | SOT-416 晶体管|晶体管|叩| 11V之间五（巴西）总裁| 50mA的一（c）|的SOT - 416
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 11V之间五（巴西）总裁| 50mA的一（c）|的SOT - 416
|
Rohm Co., Ltd.
|
| X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9 |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR MODULE, 3 PHASETHYRISTOR MODULE, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT MODULE, H BRIDGE 1200VIGBT MODULE, H BRIDGE 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT MODULE, CHOPPER 1200VIGBT MODULE, CHOPPER 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT MODULE 6 PACK 114A 1200V TRENCHIGBT MODULE 6 PACK 114A 1200V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT MODULE, DUAL 1200VIGBT MODULE, DUAL 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
MOSFET MODULE, 6 PACK 75VMOSFET MODULE, 6 PACK 75V; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT MODULE, DUAL 600V; Transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; Power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low Power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT MODULE 6 PACK 96A 600V TRENCHIGBT MODULE 6 PACK 96A 600V TRENCH; Transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT MODULE, 6 PACK 1200VIGBT MODULE, 6 PACK 1200V; Transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; Power, Pd:1600W; Time,
|
http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| NSVS676 |
463 MHZ LOW LOSS TYPE
|
NJRC[New Japan Radio]
|
| MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3 |
HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| 2003 |
Case Outline 55BT-1 / Style 1
|
GHZ Technology
|
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